Self-catalyzed InAs nanowires grown on Si: the key role of kinetics on their morphology

Daya Dhungana (1) , Nicolas Mallet (1) , Pier-Francesco Fazzini (2) , Guilhem Larrieu (1) , Fuccio Cristiano (1) , Sébastien Plissard (1)

1 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
2 LPCNO - Laboratoire de physique et chimie des nano-objets

Integrating self-catalyzed InAs nanowires on Si(111) is an important step toward building vertical gate-all-around transistors. The complementary metal oxide semiconductor (CMOS) compatibility and the nanowire aspect ratio are two crucial parameters to consider. In this work, we optimize the InAs nanowire morphology by changing the growth mode from Vapor–Solid to Vapor–Liquid–Solid in a CMOS compatible process. We study the key role of the Hydrogen surface preparation on nanowire growths and bound it to a change of the chemical potential and adatoms diffusion length on the substrate. We transfer the optimized process to patterned wafers and adapt both the surface preparation and the growth conditions. Once group III and V fluxes are balances, aspect ratio can be improved by increasing the system kinetics. Overall, we propose a method for large scale integration of CMOS compatible InAs nanowire on silicon and highlight the major role of kinetics on the growth mechanism.

Mots clés: InAs; nanowires; surface preparation; hydrogen; patterned substrates; MBE; CMOS

Domaines: Matériaux; Cristallographie; Micro et nanotechnologies/Microélectronique

Daya Dhungana, Nicolas Mallet, Pier-Francesco Fazzini, Guilhem Larrieu, Fuccio Cristiano, et al.. Self-catalyzed InAs nanowires grown on Si: the key role of kinetics on their morphology. Nanotechnology, 2022, 33 (48), pp.485601. ⟨10.1088/1361-6528/ac8bdb⟩. ⟨hal-03775839⟩