Skip to Main content Skip to Navigation
Journal articles

Study of recrystallization and activation processes in thin and highly doped Silicon-On-Insulator layers by nanosecond Laser Thermal Annealing

Abstract : A thorough study of the phosphorus (P) heavy doping of thin Silicon-On-Insulator (SOI) layers by UV nanosecond Laser Thermal Annealing (LTA) is presented in this work. As a function of the implant dose and laser annealing conditions, the melting regimes and regrowth processes, as well as the redistribution and activation of P in the top-Si amorphized layer, were investigated. The findings emphasize the critical role of the thin crystalline silicon layer that remains after the top-Si layer amorphizes, as it provides nucleation seeds for liquid phase recrystallization. The effect of the implant dose on the recrystallization process is thoroughly investigated in terms of melt energy thresholds, crystallographic nature of the resolidified layer, defect formation, surface roughness, and the formation of hillocks on the silicon surface. Optimized laser annealing conditions, corresponding to the laser energies just preceding the onset of the full melt, were identified for all implanted doses. Such optimized layers have perfect crystallinity, negligible P out-diffusion, a nearly perfectly flat P depth profile located below the segregation-induced surface pileup peak, and dopant active concentrations well above 1021 cm−3, which is close to the highest reported values for phosphorus in bulk Si substrates.
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-03454821
Contributor : LAAS HAL-LAAS Connect in order to contact the contributor
Submitted on : Tuesday, April 19, 2022 - 9:03:28 AM
Last modification on : Monday, July 4, 2022 - 9:11:08 AM

File

JAP_P doped SOI_accepted.pdf
Files produced by the author(s)

Identifiers

  • HAL Id : hal-03454821, version 2

Citation

N Chery, M Zhang, Richard Monflier, N. Mallet, G Seine, et al.. Study of recrystallization and activation processes in thin and highly doped Silicon-On-Insulator layers by nanosecond Laser Thermal Annealing. Journal of Applied Physics, American Institute of Physics, 2022, 131 (6), pp.065301. ⟨hal-03454821v2⟩

Share

Metrics

Record views

84

Files downloads

50